崔成强，教授，高级工程师。广州科技创新“百人计划”引进人才 ，江苏省“双创人才”，苏州市姑苏领军人才；曾获新加坡李光耀顶尖研究奖，海外研究奖学金、中英友好研究奖学金；曾任中国兵器工业集团首席专家，安捷利实业和香港金柏科技首席技术官；香港科技大学霍英东研究院兼职教授；常州半导体照明国家重点实验室客座研究员，香港应用科学院顾问；曾主持国家02专项、863计划等多项科技攻关与技术创新项目。有着超过20年的微电子封装材料及工艺领域研究工作经历。截至2017年，已累计获得国内外授权发明专利32项，授权实用新型专利8项，申请发明专利64项。已在国内国际著名杂志期刊上发表论文110余篇。
Cu fully filled ultra-fine blind via on flexible substrate for high density interconnect, 31st IEMT’2006, Putrajaya, Malaysia, Page: 13-19, 8-10 November, 2006.
Cu fully filled ultra-fine blind via on flexible substrate for high density interconnect, 31st IEMT’2006, Putrajaya, Malaysia, 13-19, 8-10 November, 2006.
TBGA substrate for lead free and halogen-free application, 2004 International IEEE Conference on Asian green electronics (AGEC), City University of Hong Kong, Jan. 5-6, 2004.
Ultra-fine via with filled solid Cu, IPC/TPCA Conference: Flex &Chips, Taiwan, 9-10 November, 2004.
High density interconnect on flexible substrates, IEEE/CPMT dinner meeting, Santa Clara, 9 September, 2004.
Byron Chan, Alex C K So, Thomson Lee, Chee Cheung, Development of Two-Metal Layer Flexible Substrate for High Density IC Packaging , EMAP2000, Hong Kong, pp.326-329, 2000.
XPS Study on RuO2 Electrode, J. Xiamen University (Natural Science), 27, 76-80, 1988.
Effects of Oxygen Reduction on Nickel Deposition from Unbuffered Aqueous Solutions, Part II—Characterization of the Electrode Interface in Electrodeposition", J. Electrochem. Soc., 142, 1132-1138, 1995.
Nickel Deposition from Unbuffered Neutral Chloride Solution in the Presence of Oxygen, Electrochim. Acta, 40, 1653-1662, 1995.
Degradation of Copolymers of Aniline and Metanilic Acid, Polymer Degradation and Stability, 43, 245-252, 1994.
Effect of Polyaniline on Oxygen Reduction in Buffered Neutral Solution, J. Electroanal. Chem., 367, 205-212, 1994.
Reactive Deposition of Ultrafine Cobalt Powders, Part Two—Effect of Preparation Condition, J. Materials Science, 29, 6495-6500, 1994.
Effects of Oxygen Reduction on Nickel Deposition from Unbuffered Aqueous Solutions, Part I—Deposition Process and Deposit Structure", J. Electrochem. Soc., 141, 2033-2038, 1994.
Reactive Deposition of Ultra-fine Cobalt Powders, Part I: Electrochemical Studies, J. Materials Science, 28, 461-468, 1993.
Extent of Incorporation of Hydrolysis Products in Polyaniline Films Deposited by Cyclic Potential Sweep, Electrochim Acta, 38, 1395-1404, 1993.
Origin of Difference between Potentiostatic and Cyclic Potential Sweep Deposition of Polyaniline, J. Electroanal. Chem., 346, 477-482, 1993.
Measurement of the Extent of Impurity Incorporation during Potentiostatic and Cyclic Potential Sweep Deposition of Polyaniline, Synthetic Metals, 58, 147-160, 1993.
Measurement and Evaluation of Polyaniline Degradation, Polymer Degradation and Stability, 41, 69-76, 1993.
崔成强，一种新型的封装基板及其制作方法，2015.8.5，中国，ZL201410425401.1
崔成强，王健，一种芯片的封装方法，2014.4.8，中国，201410138323.7
崔成强，王健，一种用于芯片封装的引线框架的制备方法, 2014.4.8，中国，201410138222.X
崔成强，一种镀有阻性材料的铜箔的制造方法, 2014.8.26，中国，201410424188.2
崔成强，一种新型的封装基板及其制作方法,2014.12.29，中国，PCT/CN2014/093408
崔成强，王健，陈勇，一种层间互联的工艺，2014.12.17，中国，201410775664.5
崔成强，新型埋入元器件的封装结构及电路板，2014.12.24，中国，ZL201420484667.9
崔成强，王健，一种封装芯片，2014.9.10，中国，ZL201420167806.5
崔成强，韦嘉，袁长安，张国旗，制造发光二极管芯片的方法，2013.7.9，中国，201310286849.5
崔成强，袁长安，张国旗，LED封装结构及其制作方法，2013.5.27，中国，201310201587.8
崔成强，梁润园，韦嘉，袁长安，LED封装结构及其制作方法，2013.1.4，中国，201310001095.4
崔成强，一种叠加电路板，2013.3.27，中国，ZL201220405079.2
崔成强，黄洁莹，梁润园，袁长安，张国旗，一种LED 封装体的制作方法，2012.11.28，中国，ZL201210497327.5
崔成强，梁润园，韦嘉，袁长安，LED芯片及制造方法，2012.12.28，中国，201210587583.3
崔成强，一种柔性电路板的盲孔制作工艺，2012.8.16，中国，201210290774.3
崔成强，一种耐外力作用的高可靠性的带凸包互连电路板，2012.11.21，中国，ZL201220145402.7
崔成强，柔性无胶铜电路板基材及其制作工艺，2012.8.16，中国，201210290819.7
崔成强，一种高密度线路板的制造工艺，2016.3.3，中国，ZL201210290786.6
C.Q.Cui and Chee W Cheung, Multiple integrated circuit die package with thermal performance, US 7, 906,844, Mar. 15.2011
C.Q.Cui, Kai C. Ng and Chee W. Cheung, Die-up integrated circuit package with grounded stiffener , Aug. 11, 2009, US 7, 573,131
